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insulated gate bipolar transistor with ultra-low vf diode for induction heating and soft switching applications IRGP4068DPBF irgp4068d-epbf 1 www.irf.com 08/16/06 e g n-channel c v ces = 600v i c = 48a, t c = 100c t sc 5s, t j(max) = 175c v ce(on) typ. = 1.65v features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? 5 s short circuit soa ? square rbsoa ? 100% of the parts tested for 4x rated current (i lm ) ? positive v ce (on) temperature co-efficient ? ultra-low v f hyperfast diode ? tight parameter distribution ? lead free package benefits ? device optimized for induction heating and soft switching applications ? high efficiency due to low v ce(on) , low switching losses and ultra-low v f ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi gc e gate collector emitter to-247ac IRGP4068DPBF to-247ad irgp4068d-epbf g c e c g c e c absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 96 i c @ t c = 100c continuous collector current 48 i cm pulse collector current 192 i lm clamped inductive load current 192 a i f @ t c = 160c diode continous forward current 8.0 i fsm diode non repetitive peak surge current @ t j = 25c 175 i fm diode peak repetitive forward current 16 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 330 w p d @ t c = 100c maximum power dissipation 170 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.45 c/w r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 2.0 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 80 ???
IRGP4068DPBF/irgp4068d-epbf 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 200h, r g = 10 ? . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 100a ct6 ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.30?v/c v ge = 0v, i c = 1ma (25c-175c) ct6 ?1.652.14 i c = 48a, v ge = 15v, t j = 25c 4,5,6 v ce(on) collector-to-emitter saturation voltage ? 2.0 ? v i c = 48a, v ge = 15v, t j = 150c 8,9,10 ?2.05? i c = 48a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 1.4ma 8,9 ? v ge(th) / ? tj threshold voltage temp. coefficient ? -21 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) 10,11 gfe forward transconductance ? 32 ? s v ce = 50v, i c = 48a, pw = 80s i ces collector-to-emitter leakage current ? 1.0 150 a v ge = 0v, v ce = 600v ? 450 1000 v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 0.96 1.05 v i f = 8.0a 7 ?0.810.86 i f = 8.0a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 95 140 i c = 48a 18 q ge gate-to-emitter charge (turn-on) ? 28 42 nc v ge = 15v ct1 q gc gate-to-collector charge (turn-on) ? 35 53 v cc = 400v i c = 48a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 1275 1481 j r g = 10 ? , l = 200h,t j = 25c ct4 energy losses include tail t d(off) turn-off delay time ? 145 176 j i c = 48a, v cc = 400v, v ge = 15v t f fall time ? 35 46 r g = 10 ? , l = 200h,t j = 25c i c = 48a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 1585 ? j r g = 10 ? , l = 200h,t j = 175c ct4 energy losses include tail t d(off) turn-off delay time ? 165 ? j i c = 48a, v cc = 400v, v ge = 15v wf1 t f fall time ? 45 ? r g =10 ? , l=200h, t j = 175c c ies input capacitance ? 3025 ? v ge = 0v 17 c oes output capacitance ? 245 ? pf v cc = 30v c res reverse transfer capacitance ? 90 ? f = 1.0mhz t j = 175c, i c = 192a 3 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 10 ? , v ge = +15v to 0v scsoa short circuit safe operating area 5 ? ? s v cc = 400v, vp =600v 16, ct3 rg = 10 ? , v ge = +15v to 0v wf2 conditions
IRGP4068DPBF/irgp4068d-epbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature 0 25 50 75 100 125 150 175 200 t c (c) 0 10 20 30 40 50 60 70 80 90 100 i c ( a ) 0 25 50 75 100 125 150 175 200 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) fig. 3 - reverse bias soa t j = 175c; v ge =15v 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 4 - typ. igbt output characteristics t j = -40c; tp = 80s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 5 - typ. igbt output characteristics t j = 25c; tp = 80s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 6 - typ. igbt output characteristics t j = 175c; tp = 80s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
IRGP4068DPBF/irgp4068d-epbf 4 www.irf.com fig. 7 - typ. diode forward voltage drop characteristics fig. 8 - typical v ce vs. v ge t j = -40c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 9 - typical v ce vs. v ge t j = 25c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 10 - typical v ce vs. v ge t j = 175c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 11 - typ. transfer characteristics v ce = 50v; tp = 10s 0 5 10 15 v ge (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) t j = 25c t j = 175c fig. 12 - typ. energy loss vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 10 ? ; v ge = 15v 0 255075100 i c (a) 0 1000 2000 3000 4000 5000 6000 e n e r g y ( j ) e off
IRGP4068DPBF/irgp4068d-epbf www.irf.com 5 fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 13 - typ. switching time vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 10 ? ; v ge = 15v 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f fig. 14 - typ. energy loss vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 48a; v ge = 15v 0 25 50 75 100 125 rg ( ? ) 1000 1500 2000 2500 3000 3500 4000 4500 5000 e n e r g y ( j ) e off fig. 15 - typ. switching time vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 48a; v ge = 15v 0 25 50 75 100 125 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f fig. 18 - typical gate charge vs. v ge i ce = 48a; l = 600h 0 255075100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v 8 1012141618 v ge (v) 4 6 8 10 12 14 16 18 t i m e ( s ) 50 100 150 200 250 300 350 400 c u r r e n t ( a ) i sc t sc fig. 16 - v ge vs. short circuit v cc = 400v; t c = 25c
IRGP4068DPBF/irgp4068d-epbf 6 www.irf.com fig 19. maximum transient thermal impedance, junction-to-case (igbt) fig. 20. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0400 0.000030 0.7532 0.000717 0.8317 0.004860 0.3766 0.036590 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0248 0.000014 0.0652 0.000050 0.1537 0.001041 0.2065 0.013663
IRGP4068DPBF/irgp4068d-epbf www.irf.com 7 1k vc c dut 0 l l rg 80 v dut 480v dc 4x dut 360v rg vcc dut r = v cc i cm fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit c f orce 400h g f orce dut d1 10k c sen se 0.0075 e sense e force fig.c.t.6 - bvces filter circuit l rg vcc diode clamp / dut dut / driver - 5v
IRGP4068DPBF/irgp4068d-epbf 8 www.irf.com fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 600 700 -0.40 0.10 0.60 1.10 time(s) v ce (v) -20 0 20 40 60 80 100 120 140 e off loss 5% v ce 5% i ce 90% i ce tf -100 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 time (s) v ce (v) -100 0 100 200 300 400 500 600 i ce (a) v ce i ce
IRGP4068DPBF/irgp4068d-epbf www.irf.com 9

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ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/06 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-247ad package is not recommended for surface mount application.

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